METHOD FOR PLANARIZING INSULATION LAYER OF CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT EDGE OF WAFER FROM BEING LOWERED AND ELIMINATE NECESSITY OF PROCESS FOR RE-DEPOSITING INSULATION LAYER FOR FACILITATING METAL INTERCONNECTION CONTACT MASK PROCESS

摘要

A kind of purpose: method, an insulating layer for shakeouing a capacitor of semiconductor device is arranged to that the edge of a chip is prevented to reduce and eliminate the necessity of the method for a redeposited insulating layer, it is used to promote a metal interconnection contact mask process, by using HTO (high-temperature oxydation) layer to replace a low temperature insulation layer as a layer insulation between a capacitor and a metal interconnection. Construction: a capacitor part (37) is formed in semi-conductive substrate (31). One HTO films are formed in semiconductor substrate, including capacitor part. HTO films are shakeout. HTO films are from 750-800 deg.C.A temperature is deposited at after planarization process is performed, remaining HTO films have 3000-4000 angstroms of a thickness.