SEMICONDUCTOR DEVICE FABRICATING METHOD FOR SIMULTANEOUSLY FORMING STORAGE NODE CONTACT HOLE AND BITLINE INSULATION LAYER SPACER TO DECREASE NUMBER OF PROCESS

摘要

Purpose: semiconductor device, manufacturing method is for being formed simultaneously a storage node contact hole and a bit line insulating layer gasket, it is arranged to reduce number of processes, by executing an inclined etch process in terms of etching is used to form a layer insulation of a storage node contact hole and by forming an insulating layer gasket on the side wall of a bit line. Construction: a bit line (22) is formed in semi-conductive substrate (20). One dura mater is formed in bit line. One layer insulation is formed in composite structure, has dura mater. Layer insulation is selectively etched to form the storage node contact hole for exposing semiconductor substrate, when layer insulation stays in the side wall of bit line to form insulating layer gasket (24A).