首页>
外国专利>
METHOD OF MANUFACTURING FLASH MEMORY DEVICE FOR KEEPING DISTRIBUTION OF THRESHOLD VOLTAGE CONTROLLING IONS CONSTANT WITHIN ACTIVE REGION
METHOD OF MANUFACTURING FLASH MEMORY DEVICE FOR KEEPING DISTRIBUTION OF THRESHOLD VOLTAGE CONTROLLING IONS CONSTANT WITHIN ACTIVE REGION
展开▼
机译:制造用于在有源区域内保持恒定的阈值电压控制离子分布的闪存器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method of manufacturing a flash memory device is provided to keep the distribution of threshold voltage controlling ions constant within an active region by lowering the temperature of an oxidation for forming a sidewall oxide layer in a trench and performing an ion-implantation for compensating the active region for diffused ions. CONSTITUTION: A first ion-implantation for controlling a threshold voltage is performed on a semiconductor substrate(100). A tunnel oxide layer(102), a first polysilicon layer(104) and a pad nitride layer(106) are sequentially formed thereon and a trench is formed in the substrate by performing etching on the resultant structure. A sidewall oxide layer(112) is formed along the entire surface of the trench by using a dry-oxidation at a temperature range of 800 to 950. A second ion-implantation for compensating the threshold voltage controlling ions diffused into the sidewall oxide layer is performed thereon. An oxide layer is filled in the trench.
展开▼