METHOD FOR MANUFACTURING AN ARRAY SUBSTRATE OF A TFT LCD FOR SIMPLIFYING AN ETCHING PROCESS IN FOUR-MASK PROCESSES

摘要

PURPOSE: A method for manufacturing an array substrate of a TFT(Thin Film Transistor) LCD(Liquid Crystal Display) is provided to simplify an etching process in four-mask processes. CONSTITUTION: A gate line including a gate electrode(2) is formed on a glass substrate(1). A gate insulating layer(3), an a-Si layer(4), an n+ a-Si layer(5) and an Mo layer(6) are sequentially deposited on the substrate in order to cover the gate line. A half tone mask(7) having a relative thin channel thickness covers a predetermined region of the Mo layer. The Mo layer is etched by using the half tone mask through a dry etching process, so that a data line is formed. The half tone mask portion of the channel region is removed by an ashing process. In the result material, the n+ a-Si layer and a-Si layer are etched, so that an active layer(10) is formed and the Mo layer and the n+ a-Si layer of the channel portion are continuously etched, so that source/drain electrodes(6a,6b) and a channel are formed. As a result, a transistor is constructed.