METHOD OF FORMING MIM CAPACITOR USING INTERLAYER DIELECTRIC TO PREVENT SHORT BETWEEN UPPER AND LOWER ELECTRODES

摘要

PURPOSE: A method of forming an MIM(Metal Insulator Metal) capacitor is provided to prevent short between an upper electrode and a lower electrode due to non-volatile metallic compound by using an interlayer dielectric made of oxide. CONSTITUTION: A first metal film(32) and an insulating layer(34) are sequentially deposited on a substrate(30) and patterned. An interlayer dielectric(36) is formed at sides of the patterned first metal film and the patterned insulating layer. A second metal film(38) is deposited on the patterned insulating layer and the interlayer dielectric and patterned. The thickness of the interlayer dielectric is the same as the total thickness of the first metal film and the insulating layer.