首页> 外国专利> APPARATUS AND METHOD FOR GENERATING GAS PLASMA, GAS COMPOSITE FOR GENERATING PLASMA, AND METHOD FOR MANUFACTURING SEMICONDUCTOR BY USING THE SAME, ESPECIALLY IMPROVING GENERATION EFFICIENCY OF PLASMA

APPARATUS AND METHOD FOR GENERATING GAS PLASMA, GAS COMPOSITE FOR GENERATING PLASMA, AND METHOD FOR MANUFACTURING SEMICONDUCTOR BY USING THE SAME, ESPECIALLY IMPROVING GENERATION EFFICIENCY OF PLASMA

机译:产生等离子体的装置和方法,产生等离子体的气体复合物以及利用相同的方法制造半导体的方法,特别是提高等离子体的产生效率

摘要

PURPOSE: An apparatus and a method for generating the gas plasma, a gas composite for generating the plasma and a method for manufacturing the semiconductor by using the same are provided to reduce the time required for generating the plasma. CONSTITUTION: An apparatus(4) for generating the gas plasma includes a magnetic formation unit(41). The magnetic formation unit is provided with a main magnetic formation unit(41a) and a pair of auxiliary magnetic formation units(41b,41c). The main magnetic formation unit generates the main magnetic field along an axial direction. And the pair of auxiliary magnetic formation units generate the auxiliary magnetic field parallel to the axial direction.
机译:目的:提供一种用于产生气体等离子体的设备和方法,一种用于产生等离子体的气体复合物以及一种使用该气体复合材料制造半导体的方法,以减少产生等离子体所需的时间。构成:用于产生气体等离子体的装置(4)包括磁性形成单元(41)。磁性形成单元具有主磁性形成单元(41a)和一对辅助磁性形成单元(41b,41c)。主磁性形成单元沿轴向产生主磁场。一对辅助磁性形成单元产生平行于轴向的辅助磁场。

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