首页> 外国专利> Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same

Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same

机译:用于产生气体等离子体的设备,用于产生等离子体的气体组合物以及使用该设备制造半导体器件的方法

摘要

A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
机译:一种用于制造半导体器件的方法,可以包括:形成具有轴线的主磁场;以及形成与所述轴线基本平行的副磁场;沿主磁场和辅助磁场之间的路径施加交流电;使气体沿着电流路径沿着流动路径流动,从而从该气体产生气体等离子体;将气体等离子体提供到与产生气体等离子体的位置分开的腔室中;通过使用气体等离子体执行制造半导体器件的工艺。

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