NON-VOLATILE MEMORY DEVICE WITH THICK GATE OXIDE LAYER FOR IMPROVING DYNAMIC WRITE INHIBITION CHARACTERISTICS AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to improve DWI(Dynamic Write Inhibition) characteristics of a non-volatile memory cell by using a thick gate oxide layer. CONSTITUTION: A source region(11), a source/drain region(13,15) and a drain region(17) are formed in a semiconductor substrate. A gate oxide layer(21) is formed on the source region and the drain region, respectively. A triple layer made of an oxide layer(31), a nitride layer(32) and an oxide layer(33) is formed between the gate oxide layer. At this time, the thickness of the gate oxide layer is in a range of 0.6 to 10 times of that of the triple layer.