SEMICONDUCTOR MEMORY DEVICE WITH TAG BLOCK FOR PREVENTING DATA LOSS BY HAVING SWITCH BETWEEN GLOBAL BIT LINE SENSE AMPLIFIER AND LOCAL BIT LINE SENSE AMPLIFIER

摘要

PURPOSE: A semiconductor memory device with tag block is provided to prevent data loss by having switches between the global bit line sense amplifier and the local bit line sense amplifier. CONSTITUTION: A semiconductor memory device with tag block comprises basic cell blocks(720_1, 720_2, 720_3, 720_4) consisting of unit cell blocks(720_1b, 720_2b, 720_3b, 720_4b), local bit line sense amplifier(720_1a, 720_2a, 720_3a, 720_4a) being located in one side of the unit cell block, local bit line sense amplifier(720_1c, 720_2c, 720_3c, 720_4c) being located in the other side of the unit cell block; the first global bit line sense amplifier(710a) for latching the amplified data from the local bit line sense amplifier(720_1a, 720_2a, 720_3a, 720_4a); the second global bit line sense amplifier(710b) for latching the amplified data from the local bit line sense amplifier(720_1c, 720_2c, 720_3c, 720_4c); the first global bit line connecting part(730_1), the second global bit line connecting part(730_2), and the third global bit line connecting part(730_3); a control part(800) for controlling the stored data in the first global bit line sense amplifier(710a) and the second global bit line sense amplifier(710b); the first switch(S1) for switching the data between the first global bit line sense amplifier(710a) and the second local bit line sense amplifier(720_1c, 720_2c, 720_3c, 720_4c); the second switch(S2) for switching the data between the second global bit line sense amplifier(710b) and the second local bit line sense amplifier(720_1c, 720_2c, 720_3c, 720_4c).