APPARATUS AND METHOD FOR FORMING THIN FILM IMPROVING DEPOSITION SPEED OF THIN FILM BY SUPPLYING REACTION GAS AT HIGH SPEED USING VAPOR STORAGE UNIT

摘要

PURPOSE: An apparatus and a method for forming a thin film are provided to improve the deposition speed of a thin film and to form a nitride layer of semiconductor during one cycle. CONSTITUTION: An apparatus for forming a thin film includes a first and a second reaction gas supply units, a carrier gas supply unit, a vapor storage unit, a vapor supply inlet and a pump. A thin film is formed by decomposing the first reaction gas including Si2Cl6. The residual first reaction gas is purged out. The thin film is nitrided by supplying a second reaction gas. The residual second reaction gas is purged out. The first reaction gas is supplied at a speed of 10cm/second more under a condition that the substrate is rotated.