METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO REDUCE THICKNESS OF ETCH BARRIER LAYER AND ELIMINATE NECESSITY OF PROCESS FOR ETCHING INTERLAYER DIELECTRIC

摘要

Purpose: a kind of method is arranged to the necessity for reducing the thickness of an etch barrier and elimination only executes method of the etch process in the bottom of contact in the method for forming a gasket in a storage node contact hole for etching a layer insulation for manufacturing semiconductor device. Construction: there is the first layer insulation (52) of connector plug (54) to be formed in semi-conductive substrate (50). The bit line (56) for being overlapped a mask layer pattern is formed in the first layer insulation. Second layer insulation (60) is formed in composite structure. Second layer insulation is moved to one storage node contact hole of form on lower contact plug. One insulating layer is formed in composite structure. Insulating layer is that woollen blanket corrodes, and wherein CH2F2 gases and corrosive agent gas mixing generate polymer and only execute an etch process in the bottom of contact hole, so that lower contact plug is exposed. Polymer on a semiconductor substrate is eliminated. One upper contact plug (64) is formed to fill storage node contact hole. One etch barrier and a sacrificial oxide layer (70) are sequentially formed in composite structure. One sacrificial oxide layer mode and an etch barrier layer pattern expose upper contact plug, by using a photolithography process of sacrificial oxide layer and etch barrier to be formed as a storage junction tool. It is formed with a storage knot of upper contact plug contacts.