METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO IMPROVE CELL READING PERFORMANCE OF MEMORY CELL AND REDUCE SOFT ERROR RATE, CIRCUIT BOOSTING FREQUENCY AND POWER CONSUMPTION

摘要

A kind of purpose: method, a capacitor for manufacturing semiconductor device is arranged to improve the unit reading performance of a memory element and reduce a soft error rate, circuit pressurization frequency and power consumption as form subjacent bed by multiple sections of layers to form BPSG (boron-phosphorosilicate glass) layer, wherein optionally there is the section layer of different dopant density to be configured. Construction: a layer insulation is formed in semi-conductive substrate. One contact plug (10) is by layer insulation to contact with substrate. The low layer (32) of one mold layer is formed in layer insulation, with the multiple sections of layers made of a silicon oxide layer with a different etch ratio. The high level of mold layer is by than the low layer there is a silicon oxide layer of a relatively slow etch rate to constitute. Mold layer is etched so as to the surface exposure of plug be contacted, so that a storage knot hole of the one side wall with a roughness type is formed in a large amount of section layers of composition low layer. One cylindrical storage node (34) is formed in storage knot hole.