首页> 外国专利> CVD EQUIPMENT CAPABLE OF EASILY LEVELING HEATER BLOCK TO GUARANTEE UNIFORMITY OF SEMICONDUCTOR WAFER AND IMPROVE YIELD OF SEMICONDUCTOR WAFER

CVD EQUIPMENT CAPABLE OF EASILY LEVELING HEATER BLOCK TO GUARANTEE UNIFORMITY OF SEMICONDUCTOR WAFER AND IMPROVE YIELD OF SEMICONDUCTOR WAFER

机译:能够轻松平移加热块的CVD设备,以确保半导体晶片的均匀性并改善半导体晶片的产量

摘要

Purpose: CVD (chemical vapor deposition) equipment for the heater block that can easily degradate is arranged to ensure that the uniformity of a semiconductor chip and improves the yield of a semiconductor chip by quantifying the position of a heater block and executing a position adjustment process by quantization value. Construction: a reaction chamber (200) is produced. One shower head (230) injecting jet propelling gas to a chip, is positioned at reaction chamber. It is inner that one chip is placed on the heater block (210) positioned under the shower head of reaction chamber. The upright position of heater block of one heater block lifting mechanism (240) adjustment in the outside of reaction chamber. One interval measure and display (300) measure and are simultaneously shown in the interval between heater block and shower head, including being spaced such that and further including in the outside of reaction chamber by the operation change of heater block lifting mechanism.
机译:目的:布置用于易于降解的加热块的CVD(化学气相沉积)设备,以通过量化加热块的位置并执行位置调整过程来确保半导体芯片的均匀性并提高半导体芯片的成品率通过量化值。结构:产生反应室(200)。将喷射推进气体注入芯片的一个喷头(230)位于反应室处。在内部将一个芯片放置在位于反应室喷头下方的加热块(210)上。调节一个加热块升降机构(240)的加热块在反应室外部的垂直位置。一个间隔测量和显示(300)测量并同时显示在加热器块和喷头之间的间隔中,包括通过加热器块提升机构的操作改变而间隔开并进一步包括在反应室的外部。

著录项

  • 公开/公告号KR20050018042A

    专利类型

  • 公开/公告日2005-02-23

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030055870

  • 发明设计人 KIM HO GON;

    申请日2003-08-12

  • 分类号H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:49

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