APPARATUS AND METHOD FOR SUPPLYING PLENTY OF GAS FOR UNIFORM HEAT PROCESS OF SEMICONDUCTOR WAFER TO IMPROVE YIELD OF WAFER

摘要

PURPOSE: An apparatus for supplying plenty of gas for a uniform heat process of a semiconductor wafer is provided to make the thickness of a dielectric formed on the wafer uniform and to improve yield of the wafer by supplying process gas of uniform temperature and pressure to the center of the wafer from the outer circumference of the wafer. CONSTITUTION: Gas is supplied to a connection block(110) closely attached to a gas supply unit of a chamber in which an RTP(rapid thermal process) is performed on the wafer. A ring(120) communicates with and is connected to both sides of the connection block while extending as an almost semicircle line type to a gas exhaust hole along the circular inner wall of the chamber. A plurality of supply holes(122) are formed inside the ring to supply preheated gas to the inner circumferential surface of the wafer.