NON-VOLATILE SEMICONDUCTOR DEVICE WITH ENHANCED FLOATING GATE STRUCTURE FOR MAXIMIZING PROGRAMMING EFFICIENCY AND MANUFACTURING METHOD THEREOF

摘要

Purpose: although the application of a low-voltage, a non-volatile semiconductor device and its manufacturing method are by suitably changing the structure setting of a floating gate into the efficiency maximization for making programming. Construction: a non-volatile semiconductor device includes semi-conductive substrate (100), has a region of activation and an isolated area, a source region, a pair of of floating gates, a wordline and a drain region. Source region (120a) is formed in region of activation. A pair of of floating gates (112) are formed in the substrate of region of activation. One lower part of each floating gate, which is extended, roundly forms a channel region of lower part and an edge. Wordline (118) is formed in floating gate. Drain region (120b) is overlapped with word line portion.