SELECTIVE ETCH PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC OF HIGH DIELECTRIC VALUE TO PREVENT GATE ELECTRODE FROM BEING CONSIDERABLY LIFTED OR UNDERCUT WHILE SUBSTRATE UNDER DIELECTRIC LAYER IS NOT MEANINGFULLY DAMAGED

摘要

PURPOSE: A selective etch process for fabricating a semiconductor device with a gate dielectric of a high k value is provided to prevent a gate electrode from being considerably lifted or undercut while a substrate under a dielectric layer is not meaningfully damaged by selectively eliminating the first part of a gate dielectric layer with a high k value with respect to the second part of the gate dielectric layer of the high k value. CONSTITUTION: A gate dielectric layer(101) of a high k value is formed on a substrate. The first part(103) of the gate dielectric layer of the high k value is varied to guarantee that the first part of the gate dielectric layer with the high k value is selectively removed with respect to the second part(104) of the gate dielectric layer of the high k value.