SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING DEGRADATION DUE TO HARDMASK ON GATE ELECTRODE BY USING HARDMASK HAVING LAMINATED STRUCTURE OF SILICON LAYER/DIELECTRIC LAYER OR SILICON OXIDE LAYER/DIELECTRIC LAYER AND FORMING METHOD THEREOF

摘要

Purpose: semiconductor device, it can prevent the hardmask degenerated due on a gate electrode, it is arranged to reduce mechanical stress formation hardmask with its method of forming, there is one silicon layer/dielectric layer or one silicon oxide layer/dielectric layer layer structure. Construction: a gate insulating layer (31) is formed in a upper surface of semi-conductive substrate (30). One gate electrode (32) is formed in a upper surface of gate insulating layer. One silicon layer (33A) and a dielectric layer (33B) are sequentially laminated on a upper surface of gate electrode. One silicon oxide layer is formed between gate electrode and silicon layer. Gate electrode is formed by stacking the first diffusion barrier (32B), a polysilicon layer (32A), a tungsten layer (32C) and the second diffusion barrier (32D).