首页> 外国专利> METHOD OF MANUFACTURING TRANSPARENT STAMP USED IN NANO-IMPRINTING LITHOGRAPHY TO ACQUIRE EASILY NANO-PATTERNS WITH HIGH ASPECT RATIO WITHOUT DEGRADATION OF NANO-PATTERN SHAPE

METHOD OF MANUFACTURING TRANSPARENT STAMP USED IN NANO-IMPRINTING LITHOGRAPHY TO ACQUIRE EASILY NANO-PATTERNS WITH HIGH ASPECT RATIO WITHOUT DEGRADATION OF NANO-PATTERN SHAPE

机译:制造不影响纳米图形形状的,采用纳米压印术的透明印章的方法,以获取具有高纵横比的容易的纳米图形

摘要

PURPOSE: A method is provided to acquire easily nano-patterns with a high aspect ratio and to obtain an exact shape from each nano-pattern by using a transparent stamp in a nano-imprinting lithography. CONSTITUTION: A mask layer is formed on a silicon substrate(40). Nano patterns are formed on the silicon substrate by performing etching using the mask layer as an etching mask. The mask layer is removed therefrom. A silicon oxide layer(35) is formed thereon. A transparent handling wafer(37) is bonded on the resultant structure. A transparent stamp(30) is completed by removing the substrate therefrom.
机译:目的:提供一种方法,以在纳米压印光刻中使用透明压模容易地获得具有高纵横比的纳米图案并从每个纳米图案获得精确的形状。组成:在硅衬底上形成掩模层(40)。通过使用掩模层作为蚀刻掩模进行蚀刻,在硅基板上形成纳米图案。从其上去除掩模层。在其上形成氧化硅层(35)。将透明的处理晶片(37)粘结在所得结构上。透明印模(30)通过从其上移去基板而完成。

著录项

  • 公开/公告号KR20050024177A

    专利类型

  • 公开/公告日2005-03-10

    原文格式PDF

  • 申请/专利权人 LEE HEON;

    申请/专利号KR20030062050

  • 发明设计人 LEE HEON;

    申请日2003-09-05

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:43

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