METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR REDUCING CONTACT RESISTANCE AND PREVENTING DEFECTS OF CIRCUITS

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent electrical connection between junction parts due to a silicide layer by protruding the junction parts as source/drain to an upper side and forming the silicide layer thereon. CONSTITUTION: A silicon growth layer is formed by growing a junction region of a semiconductor substrate(401). A junction part is formed by implanting impurities into the junction region having the projected silicon growth layer. A gate oxide layer and a conductive material layer are formed on the entire surface of the semiconductor substrate. A word line(410) is formed by etching the conductive material layer and the gate oxide layer. An insulating layer spacer(412) is formed on a sidewall of the word line and a sidewall of the silicon growth layer. A silicide layer(415) is formed on the word line by performing a self-alignment process.