MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE CAPABLE OF REDUCING RESISTANCE OF A METAL SILICIDE LAYER BY PREVENTING GENERATION OF A DEFECT PART DUE TO A PHASE CHANGE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to make a silicon surface amorphous by including an ion injection process for forming a solid solution through reaction with silicon.;CONSTITUTION: A gate insulation film(103) and a polysilicon film are formed on a semiconductor substrate(101). A laminate pattern is formed by etching the polysilicon film and the gate insulation film. A spacer film(107) and an etch stop film(109) are formed in a sidewall of the laminate pattern. A junction region(102) is formed by injecting a dopant ion to the semiconductor substrate of both sides of the laminate pattern. An ion is injected to the junction region and the polysilicon film, and forms a solid solution through reaction with the silicon. A metal film is formed on a top part of the polysilicon film and the junction region.;COPYRIGHT KIPO 2010