SEMICONDUCTOR DEVICE INCLUDING QUANTUM WELL STRUCTURE PROVIDED WITH DUAL BARRIER LAYERS, SEMICONDUCTOR LASER EMPLOYING FOR THE SAME AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device (100) having a GaInNAs quantum well structure (110) including a plurality of barrier layers (116A,112,116B,118A and 118B) in which the emission wavelength of the device can be controlled by varying the thicknesses and compositions of the barrier layers, a semiconductor laser using the semiconductor device (100) and methods of manufacturing the same are provided. The semiconductor laser includes a GaAs-based substrate (104), a quantum well structure (110) formed on the GaAs-based substrate (104), a cladding layer (106) surrounding the quantum well structure, and a pair of electrodes (102 and 126) electrically connected to the cladding layer (106). The quantum well structure (110) includes a quantum well layer (114), a pair of first barrier layers (116) facing each other with the active region (114) therebetween, and a pair of second barrier layers (118) adjacent to the respective first barrier layers. Optical quality degradation in a long wavelength range, which arises with common quantum well structures, and emission wavelength shifting to a shorter wavelength range, which occurs when a GaInNAs quantum well structure is thermally treated, can be prevented.