METHODS OF FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT WITH THIN FILM TRANSISTORS USING A DAMASCENE TECHNIQUE AND A SELECTIVE EPITAXIAL GROWTH TECHNIQUE AND SEMICONDUCTOR INTEGRATED CIRCUITS FABRICATED THEREBY

摘要

Using a damascene technique and selective epitaxial growth techniques to provide methods and a semiconductor integrated circuit produced thereby for producing a semiconductor integrated circuit having a thin film transistor. The method are provided to as to form a single crystal semiconductor plug penetrating through the interlayer insulating layer to form a molding layer pattern for exposing the single crystal semiconductor plug on the interlayer insulating layer. It was then using the single crystal semiconductor plug in the seed layer to grow a single crystal epitaxial semiconductor pattern on the interlayer insulating layer. Sikieo planarizing the single crystal semiconductor epitaxially pattern to form a single crystal semiconductor body having a uniform thickness in the molding layer patterns. As a result, the sidewalls of the single crystal semiconductor body are becoming surrounded by the molding layer patterns, the single crystal semiconductor body has an excellent single crystal structure (single excellent crystalline structure).