METHODS OF FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT WITH THIN FILM TRANSISTORS USING A SELECTIVE EPITAXIAL GROWTH TECHNIQUE AND A PARTIAL PLANARIZATION TECHNIQUE AND SEMICONDUCTOR INTEGRATED CIRCUITS FABRICATED THEREBY

摘要

The selective epitaxial growth techniques and methods section, using a planarization technology for manufacturing a semiconductor integrated circuit having a thin film transistor and provides a semiconductor integrated circuit produced thereby. The method may comprises forming the insulating layer on the single crystal semiconductor substrate. Forming a single crystal semiconductor plug penetrating through the interlayer insulating layer, and forming a single-crystal semiconductor epitaxially pattern covering the interlayer insulating layer in contact with the single crystal semiconductor plug. The single crystal by patterning the semiconductor epitaxial sikieo planarize the pattern portions (partially planarizing) the inter-layer insulating layer on the semiconductor body layer to form a semiconductor body layer, to form a semiconductor body. As a result, the semiconductor body has at least is formed with a portion of the single crystal semiconductor epitaxially pattern excellent single crystal structure (single excellent crystalline structure).