首页> 外国专利> UNIFORM RECESS DEPTH OF RECESSED RESIST LAYERS IN TRENCH STRUCTURES

UNIFORM RECESS DEPTH OF RECESSED RESIST LAYERS IN TRENCH STRUCTURES

机译:沟槽结构中阻力层的均匀应力深度

摘要

A method for forming uniform-depth recesses across areas of different trench density, in accordance with the present invention, includes providing a substrate having trenches formed therein. The substrate includes regions of different trench density. The trenches are filled with a first filler material, and the first filler material is removed from a surface of the substrate. A second filler material is formed over the surface of the substrate such that the depth of the second filler material is substantially uniform across the regions of different trench density. Recesses are formed in the trenches such that the recess depth below the surface of the substrate is substantially uniform across the regions
机译:根据本发明,一种用于在不同沟槽密度的区域上形成均匀深度的凹槽的方法,包括提供其中形成有沟槽的衬底。衬底包括不同沟槽密度的区域。用第一填充材料填充沟槽,并且从衬底的表面去除第一填充材料。在衬底的表面上方形成第二填充材料,使得第二填充材料的深度在不同沟槽密度的区域上基本均匀。在沟槽中形成凹槽,使得在基板表面下方的凹槽深度在整个区域内基本均匀

著录项

  • 公开/公告号KR100481384B1

    专利类型

  • 公开/公告日2005-04-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20027008897

  • 发明设计人 볼파르트외르크;

    申请日2002-07-10

  • 分类号H01L21/306;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:59

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