A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses

摘要

In this paper, a novel 750V Recessed-Emitter-Trench IGBT (RET-IGBT) featuring Recessed-Dummy-Trench (RDT) structure is proposed. The mesa width is shrunk to 1.2μm with the advantage of RET, which improves the trade-off relationship between on-state voltage drop (V_CE(ON)) and turn-off energy loss (E_OFF) without any performance sacrifice. Furthermore, by applying proper dummy trench and dummy P-well ground scheme through RDT concept, 34.1% lower Miller capacitance, 34.9% lower turn-on loss and 12.3% lower turn-off loss are achieved with better turn-on dI/dt and reverse recovery dV/dt controllability, which are favourable for high frequency operations.