Monolithic integrated circuit device for providing high-ohmic resistance or RC-filter using series NMOS and PMOS field effect transistors

摘要

The integrated circuit device has at least one NMOS field effect transistor (T(N)1,T(N)2) and at least one PMOS field effect transsitor (T(P)), each having 2 channel terminals and a gate terminal and connected in series, their gate voltages (V(GN),V(GP) selected so that at least one of the series transistors is below its threshold voltage for providing an effective resistance (R) across the series circuit.