Semiconductor component with cell field of strip-shaped trench structures for trench field effect transistors and modified doping regions at lateral ends of trench structures

摘要

The semiconductor component has a trough structure arrangement (10) formed in a semiconductor region or chip, for providing a cell field (Z) with a number of strip-shaped trench structures (30) for trench field effect transistors having gate electrode regions (G) within the trench structures and source regions (S), body regions (B) and body contact regions (Bk) between the trench structures. A lateral end region (30e) of each trench structure is enclosed by a modified doping region, for provision of a field plate region. An independent claim for a manufacturing method for a semiconductor component is also included.