Semiconductor package e.g. MOSFET structure, has substrate in cell field, which includes temperature recording mechanism with pn-semiconductor diodes that are formed by p and n regions, which contact at edge of field

摘要

The package has a substrate (2) in a cell field (5), which includes semiconductor transistors (61-64). The cell field has a temperature recording mechanism including pn-semiconductor diodes that are formed by p and n regions in the substrate, where regions contact at an edge of the field. Cut off-currents indicating temperature of the respective semiconductor diodes are determined by the mechanism.