Read operation performing method for use in memory cell string, involves applying write sense current across magnetic random access memory cell, and determining whether one voltage across string differs from another voltage

摘要

The method involves applying a constant current through a memory cell string. A write sense current is applied across a magnetic random access memory (MRAM) cell, and two voltages across the memory cell string are measured. One of the voltages is determined whether it differs from the other voltage. A logic level associated with a state is read out in response to the former voltage differing from the latter voltage. An independent claim is also included for a data storage device.