Data storage device for e.g. spin dependent tunneling device, has detection circuit to detect voltage change at node in response to voltage provided to memory cell string and write sense current applied across magnetic RAM cell

摘要

The device has a memory cell string (12) including a magnetic random access memory (MRAM) cell coupled to another MRAM cell. A detection circuit (26) is coupled to a node between the two MRAM cells. The detection circuit detects a voltage change at the node in response to a voltage provided to the memory cell string and a write sense current applied across the former MRAM cell. Independent claims are also included for the following: (A) a method of performing a read operation from a memory cell in a memory cell string (B) a system for reading memory cell.