Patterned mask for lithography device, has protecting unit maintaining disruptive particles at distance greater or equal to value taken from depth of focus of device and height associated to part allowed for photons absorption

摘要

The mask has a substrate (ST) whose one side is integrated to a reflecting structure (SMR), and including a desired pattern (MF) on its front side. A transparent protecting unit (SP) maintains disruptive particles (PP) at a distance (H) of the pattern i.e. greater or equal to one of two values taken from the depth of focus of a lithography device and the height associated to a part allowed for photons absorption by the particles.