首页> 外国专利> METHOD FOR PRODUCING METAL FLUORIDE SINGLE CRYSTAL AND AS-GROWN SINGLE CRYSTAL OF METAL FLUORIDE PRODUCED BY THE METHOD

METHOD FOR PRODUCING METAL FLUORIDE SINGLE CRYSTAL AND AS-GROWN SINGLE CRYSTAL OF METAL FLUORIDE PRODUCED BY THE METHOD

机译:制备金属氟化物单晶的方法以及该方法生产的金属氟化物的成年单晶

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a metal fluoride single crystal from which an as-grown single crystal, in which scattering bodies are very few and from which an optical material having a large diameter can be cut in a high yield, can be produced.;SOLUTION: The metal fluoride single crystals such as calcium fluoride and the like are produced by the method that the metal fluoride single crystal is grown by bringing a seed crystal into contact with the molten liquid surface of a raw metal fluoride and by pulling it according to a single crystal pulling method. The depth of the molten liquid of the raw metal fluoride is kept at least in a certain period from the beginning to the end of the pulling, favorably the period, where the depth is 0.65 times or less to the cylindrical diameter of the as-grown single crystal, is prepared as the practically whole period of the pulling of the cylindrical part of the as-grown single crystal.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种用于生产金属氟化物单晶的方法,从该方法生长的单晶,其中散射体很少,并且可以高收率地切割大直径的光学材料,解决方案:氟化钙等金属氟化物单晶是通过使籽晶与金属氟化物的熔融液表面接触而生长金属氟化物单晶的方法制备的。根据单晶拉制方法拉制。从拉拔开始到结束,至少在一定期间内保持金属氟化物的熔融液的深度,优选为所生长的圆柱直径的0.65倍以下的时期。单晶,是在拉长所生长的单晶的圆柱形部分的几乎整个过程中制备的。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006117494A

    专利类型

  • 公开/公告日2006-05-11

    原文格式PDF

  • 申请/专利权人 TOKUYAMA CORP;

    申请/专利号JP20040309430

  • 发明设计人 NAWATA TERUHIKO;YANAGI HIROYUKI;

    申请日2004-10-25

  • 分类号C30B29/12;

  • 国家 JP

  • 入库时间 2022-08-21 21:56:42

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