首页> 外国专利> LITHIUM BORATE SINGLE CRYSTAL, LITHIUM BORATE SINGLE CRYSTAL WAFER, AND METHOD FOR MANUFACTURING THE SAME

LITHIUM BORATE SINGLE CRYSTAL, LITHIUM BORATE SINGLE CRYSTAL WAFER, AND METHOD FOR MANUFACTURING THE SAME

机译:硼酸锂单晶硅片,硼酸锂单晶硅片及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a lithium borate (LBO) single crystal wherein the number of air bubbles in the crystal is reduced, a lithium borate single crystal wafer, and a method for manufacturing the same.;SOLUTION: The LBO single crystal is produced by a Czochralski method or a Bridgman method, and contains an alkaline earth metal in an amount of not lower than 20 ppm or 30 ppm in the whole ingot. The LBO single crystal wafer is cut out from the LBO single crystal. The method for manufacturing the LBO single crystal is based on the Czochralski method or the Bridgman method, and comprises growing the single crystal at a speed of ≥0.5 mm/h from an LBO raw material melt containing the alkaline earth metal in such an amount that the concentration of the alkaline earth metal in the shoulder part of a grown single crystal becomes ≥20 ppm.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种其中晶体中的气泡数量减少的硼酸锂(LBO)单晶,一种硼酸锂单晶晶片及其制造方法。用Czochralski法或Bridgman法制备的碱金属在整个铸锭中的含量不低于20ppm或30ppm。从LBO单晶切出LBO单晶晶片。用于制造LBO单晶的方法是基于Czochralski法或Bridgman方法的,并且包括以这样的量从包含碱土金属的LBO原料熔体中以大约0.5mm / h的速度生长单晶。生长的单晶肩部碱土金属的浓度变为20 ppm。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005343712A

    专利类型

  • 公开/公告日2005-12-15

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP20040162111

  • 发明设计人 MAKIKAWA SHINJI;

    申请日2004-05-31

  • 分类号C30B29/22;C30B11/00;C30B15/00;

  • 国家 JP

  • 入库时间 2022-08-21 21:53:52

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