HIGHLY HEAT-RESISTANT SYNTHETIC POLYMER COMPOUND AND SEMICONDUCTOR DEVICE OF HIGH DIELECTRIC STRENGTH COATED WITH THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a wide-gap semiconductor device of high dielectric strength, by improving insulating properties of a wide-gap semiconductor element in the wide-gap semiconductor device, such as SiC, which is used at a high temperature of ≥ 150°C.;SOLUTION: This wide-gap semiconductor device is obtained by coating an external surface of the wide-gap semiconductor element with a synthetic polymer compound. The synthetic polymer compound is formed into a three-dimensional steric structure, by combining organosilicon polymers C with one another through covalent bonds formed by addition reaction, wherein the organosilicon polymers C are each formed by combining one or more kinds of organosilicon polymers A having a crosslinking structure due to a siloxane (Si-O-Si bonding group) with one or more kinds of organosilicon polymers B having a linear combining structure due to the siloxane through a siloxane bond. Fine particles of insulating ceramics having high thermal conductive properties are mixed into the synthetic polymer compound, so that thermal conductivity of the polymer is enhanced.;COPYRIGHT: (C)2006,JPO&NCIPI