MAGNETORESISTIVE EFFECT ELEMENT, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, HEAD ARM ASSEMBLY, AND MAGNETIC DISK DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain the large change of a magnetic resistance when a current is made to flow perpendicularly to the surface of each layer constituting a magnetoresistive effect element.;SOLUTION: The MR element 5 is provided with a nonmagnetic conductive layer 24, a free layer 25 which is arranged so that the layer 25 may adjoin one surface of the nonmagnetic conductive layer 24 and changes in the direction of magnetization in accordance with the external magnetic field, and a pinned layer 23 which is arranged so that the layer 23 may adjoin the other surface of the nonmagnetic conductive layer 24 and is fixed in the direction of magnetization. The free layer 25 has first and second magnetic layers F1 and F2 and a coupling layer 40 arranged between the magnetic layers F1 and F2. The second magnetic layer F2 is arranged nearer to the pinned layer 23 than the first magnetic layer F1, and the magnetic layers F1 and F2 are coupled with each other in an antiferromagnetic state through the coupling layer 40. The bulk scattering coefficient β of the first magnetic layer F1 has a negative value and that β of the second magnetic layer F2 has a positive value.;COPYRIGHT: (C)2006,JPO&NCIPI