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JUNCTION FIELD EFFECT TRANSISTOR, JUNCTION HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF
JUNCTION FIELD EFFECT TRANSISTOR, JUNCTION HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF
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机译:结型场效应晶体管,结型高电子迁移率场效应晶体管及其制造方法
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摘要
PROBLEM TO BE SOLVED: To simplify manufacturing and stabilize characteristics such as channel length and threshold voltage, relating to a junction field effect transistor.;SOLUTION: A junction type gate region 34 is formed by ion implantation region of C (carbon), and its low diffusion coefficient is utilized to stabilize characteristics such as channel length and threshold voltage. In manufacture, activation of impurities can be simultaneously performed with low resistance regions 33S and 33D of source and drain, for simplified manufacturing.;COPYRIGHT: (C)2006,JPO&NCIPI
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