Variation revision of the minute size in the whole wafer which is due to the heat regulation of the local wafer

摘要

Topic Offer method and the device which adjust the temperature of the wafer.SolutionsThe etching system 100 which etches the material of the wafer, measurement equipment 114, etching chamber has 102, and control control equipment 112. Measurement equipment 114 at plural setting positions minute size tesutohuichiya (CD) measures according to the profile of the wafer. The chuck adjoining to each setting position inside 108 which keeps the wafer and the said chuck 108, the plural exothermic bodies 110 which are arranged and, it possesses etching chamber 102, receives the wafer from measurement equipment 114. Control control equipment 112 in the measurement equipment is connected 114 which receives CD and exothermic body 110. This control control equipment 112 in order to revise the CD variation which it occurs with lithography processing before the etching processing, adjusts the temperature of each exothermic body at the time of processing which decreases the variation of minute size between each setting position making use of the etching quality which is temperature dependence of etching processing.