METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY COMPENSATING STRESS EFFECT AND OPTICAL PROXIMITY EFFECT OF SHALLOW TRENCH ISOLATION

摘要

PPROBLEM TO BE SOLVED: To provide the method of compensating the defect of profile in a semiconductor device manufacturing process. PSOLUTION: A semiconductor device manufacturing method comprises the steps of determining the isolation structure stress effect of a first semiconductor device, determining the optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is compensated with the optical proximity effect on a manufacture model, and constituting a third semiconductor device using the selected design parameter. PCOPYRIGHT: (C)2006,JPO&NCIPI