Inductively coupled plasma control method and inductively coupled plasma processing apparatus

摘要

PROBLEM TO BE SOLVED: To properly control a density of plasma generating in a vacuum chamber.;SOLUTION: The inductively-coupled plasma processing apparatus is equipped with a vacuum changer 10 having a quartz shield board 11 around a peripheral wall, an inductive coil 16 provided outside of the quartz shield board 11, a first high-frequency power supply to supply high-frequency power to the inductive coil 16, and a first matching unit provided between the first high-frequency power supply and the inductive coil 16. A high-frequency impedance value formed by the inductive coil 16 and the quartz shield board 11 is calculated with a condition of a metal body 22 arranged in the vacuum chamber 10. The shape of the inductive coil 16 or the quartz shield board 11 is changed to make the calculated high-frequency impedance value to come near the given value.;COPYRIGHT: (C)2003,JPO