首页> 外国专利> ELECTRON BEAM LITHOGRAPHY DEVICE, METHOD OF CONTROLLING TEMPERATURE THEREOF, AND CIRCUIT PATTERN MANUFACTURING DEVICE

ELECTRON BEAM LITHOGRAPHY DEVICE, METHOD OF CONTROLLING TEMPERATURE THEREOF, AND CIRCUIT PATTERN MANUFACTURING DEVICE

机译:电子束光刻设备,控制其温度的方法以及电路图形制造设备

摘要

PROBLEM TO BE SOLVED: To provide an electron beam lithography device or a circuit pattern manufacturing device without the need of returning to an auxiliary chamber and again controlling the temperature by re-heating, and with high temperature adjustment accuracy.;SOLUTION: The electron beam lithography device has a sample chamber kept in a vacuum for making lithography by electron beams on a sample held on a sample holding tray and the auxiliary chamber adjacent to the sample chamber, whose air pressure is controlled over a range from a vacuum to an atmospheric pressure, for keeping the sample to be put in/out of the sample chamber while put in the tray. A temperature sensor for measuring the temperature of the sample is provided on the sample holding tray. The temperature measurement of the sample in the sample chamber and in the auxiliary chamber is done by the temperature sensor. The temperature of the sample is controlled based on the temperature measurement of the temperature sensor.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种电子束光刻设备或电路图案制造设备,而无需返回辅助腔室并通过重新加热来再次控制温度,并且具有很高的温度调节精度。光刻设备具有保持在真空中的样品室,用于通过电子束对保持在样品保持托盘上的样品进行光刻,以及与样品室相邻的辅助室,其气压被控制在从真空到大气压的范围内,用于在将样品放入托盘时,将其放入样品室/从样品室中取出。在样品保持托盘上设置有用于测量样品温度的温度传感器。样品室和辅助室中样品的温度测量由温度传感器完成。样品的温度根据温度传感器的温度测量值进行控制。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006066690A

    专利类型

  • 公开/公告日2006-03-09

    原文格式PDF

  • 申请/专利权人 HITACHI HIGH-TECHNOLOGIES CORP;

    申请/专利号JP20040248177

  • 发明设计人 MIZUOCHI MAKI;

    申请日2004-08-27

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 21:50:36

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