From the Si wafer for GaN semiconductor grain growth, the wafer for the GaN luminous element and the surface uses that of the Si

摘要

PROBLEM TO BE SOLVED: To favorably form a GaN layer having zinc-blende type crystal structure by making the surface structure into double step player over the whole face without deposited material of oxygen over a specific range from the surface of an Si substrate obtained by the CZ process to the thickness direction.;SOLUTION: Heavily B-doped P+Si single crystal in which B is doped in an amount of 1.0×1018 atoms/cm3 is pulled up by the CZ process and sliced to provide an Si substrate free from pit of COP(Crystal Originated Particle), etc., on the surface and having 5/1,000 to 15/1,000 Ωcm. The Si substrate is subjected to annealing treatment at 800-1,300°C in H2 gas atmosphere and Si is subjected to epitaxial growth at 1050-1100°C on the substrate by using SiCl4, etc., as a raw material gas to form an Si single crystal. Thereby, Si wafer for growth of GaN semiconductor crystal, having ≤1.0×107/cm atoms oxygen concentration over at least 3 μm, preferably at least 5 μm from the surface of the Si substrate to the thickness direction, free from deposited material of oxygen and forming the surface structure as double step layer over whole surface is obtained.;COPYRIGHT: (C)2000,JPO