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The chemical amplification die negative die photoresist constituent for the thick film, the photoresist backing material and the bump formation manner which uses this

机译:用于厚膜的化学放大负片型光刻胶成分,光刻胶底材以及使用该光刻胶的凸点形成方式

摘要

To provide a chemically amplified negative photoresist composition for thick films having high sensitivity and good plating resistance and suitable for the formation of thick films favorable for use as materials for forming bumps and re-wiring and a metal post used in a CSP manufacturing technique and to provide a photoresist base material and a method for forming bumps using the same. SOLUTION: In the chemically amplified negative photoresist composition for thin films having 20-150 μ m thickness including (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with a radiant ray and (C) a compound which takes part in a crosslinking reaction in the presence of an acid and the component (A) comprises a mixture of (a1) a novolak resin having a weight average molecular weight of 5,000-10,000 and (a2) a copolymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of =5,000.
机译:本发明提供了一种化学放大负型光刻胶组合物,该组合物用于厚膜,具有高灵敏度和良好的耐电镀性,并且适合于形成厚膜,所述厚膜有利于用作形成凸块和重新布线的材料以及用于CSP制造技术的金属柱。提供一种光致抗蚀剂基础材料以及使用该材料形成凸点的方法。解决方案:在化学放大负型光刻胶组合物中,该光刻胶组合物用于具有20-150μm的薄膜。厚度为(m),包括(A)碱溶性树脂,(B)在辐射线照射下会产生酸的化合物和(C)在酸与组分存在下参与交联反应的化合物A)包括(a1)重均分子量为5,000-10,000的线型酚醛清漆树脂和(a2)至少包含羟基苯乙烯结构单元且重均分子量<= 5,000的共聚物的混合物。

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