Sputtering target, dielectric film formed from the sputtering target and method for producing the dielectric film

摘要

A sputtering target according to the invention including an oxide sintered body containing NbO_x and TiO_x in which the abundance ratio of Ti atoms in the target is from 70% to 90% both inclusively. Preferably, the oxide sintered body has a specific resistance value not higher than 10Ω·cm. Preferably, theoxidesinteredbody has a thermal expansion coefficient not larger than 7 ×10⁻⁶/K and a thermal conductivity not lower than 10 ×10⁻⁴ cal/mm-K-sec.