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Method of performing a surface treatment respectively on the via and the trench in a dual damascene process

机译:在双镶嵌工艺中分别对通孔和沟槽进行表面处理的方法

摘要

The present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process by the plasma having the inclined angle. The residual and/or the metal surface oxide on the bottom of the via are removed in the via and the trench etching process, and the surface treatment is performed on the surface of the trench, thereby preventing the poor electrical and increasing the adhesive force between the surface of the trench and the barrier metal layer, resulting in solving the disadvantage which the surface treatment can not be respectively performed and the trench according to the prior art.
机译:本发明提供了一种在双镶嵌工艺中通过具有倾斜角的等离子体在通孔和沟槽上分别进行表面处理的方法。在通孔和沟槽蚀刻工艺中去除通孔底部上的残留和/或金属表面氧化物,并对沟槽的表面进行表面处理,从而防止不良的电,并增加之间的粘合力沟槽和阻挡金属层的表面,解决了现有技术无法对沟槽进行表面处理的缺点。

著录项

  • 公开/公告号US2006234498A1

    专利类型

  • 公开/公告日2006-10-19

    原文格式PDF

  • 申请/专利权人 QIANG GUO;

    申请/专利号US20050107966

  • 发明设计人 QIANG GUO;

    申请日2005-04-18

  • 分类号H01L21/4763;

  • 国家 US

  • 入库时间 2022-08-21 21:47:45

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