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Methods for forming single Damascene via or trench cavities and for forming dual Damascene via cavities
Methods for forming single Damascene via or trench cavities and for forming dual Damascene via cavities
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机译:形成单个大马士革通孔或沟槽腔以及形成双重大马士革通孔的方法
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摘要
Methods are disclosed for forming trench or via cavities in a single damascene interconnect structure, comprising etching (112) a dielectric layer to form a cavity there and to expose an underlying etch-stop layer, and etching the exposed etch-stop layer to extend the cavity and to expose a conductive feature in an existing interconnect structure, wherein etching the portion of the dielectric layer and etching the exposed portion of the etch-stop layer are performed concurrently with substantially no intervening processing steps therebetween. Also disclosed are methods of forming a via cavity in a dual damascene interconnect structure, comprising forming (104) an etch-stop layer over an existing interconnect structure, forming (106) a dielectric layer over the etch-stop layer, etching (114b) a portion of the dielectric layer to form a via cavity in the dielectric layer and to expose a portion of the etch-stop layer, and etching (116) the etch-stop layer to extend the via cavity, where the dielectric layer is covered during etching of the etch-stop layer.
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