Method of enhancing the photoconductive properities of a semiconductor and method of producing a semiconductor with enhanced photoconductive properties

摘要

A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimised so as to obtain semiconductor with useful photoconductive properties.