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Fabrication of advanced silicon-based MEMS devices

机译:先进的硅基MEMS器件的制造

摘要

A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.
机译:通过在公共基板上制造包括多个电子组件的电子设备,在电子基板上沉积热稳定的互连层,并封装互连的互连体,从而在公共基板上制造微机电设备和电子设备。具有保护层的电子设备,在保护层上形成牺牲层,在牺牲层和保护层上开孔以允许将MEM器件连接到电子设备,通过沉积和图案化至少一个来制造MEM器件非晶硅层,并去除牺牲层的至少一部分。以此方式,可以在电子器件之后在同一衬底上制造MEM器件。

著录项

  • 公开/公告号US2006166403A1

    专利类型

  • 公开/公告日2006-07-27

    原文格式PDF

  • 申请/专利权人 LUC OUELLET;ROBERT ANTAKI;

    申请/专利号US20050242960

  • 发明设计人 LUC OUELLET;ROBERT ANTAKI;

    申请日2005-10-05

  • 分类号H01L21/50;H01L21/48;H01L21/44;

  • 国家 US

  • 入库时间 2022-08-21 21:47:15

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