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Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent
Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent
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机译:半导体系统在导通状态下充当晶闸管,在瞬态或过流状态下充当双极晶体管
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摘要
A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large, and automatically switches between them according to the magnitude of the current. The IGBT is formed with a first conductivity-type semiconductor substrate. On a surface layer of the substrate is a second conductivity-type well region to which a first well electrode is connected. A first conductivity-type emitter region, to which an emitter electrode is connected, is disposed on a surface layer in the well region. A control electrode is disposed through an insulating film partially covering the well and emitter regions. A second conductivity-type well layer, to which the second well electrode is connected, is disposed on a back surface side of the substrate. The self arc-extinguishing device is connected to the IGBT between the emitter electrode and the first terminal. The rectifying device is connected between the first well electrode and the first terminal.
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