Quasi-vertical semiconductor component e.g. diode, vertical DMOS-transistor, bipolar transistor or thyristor, with inner cells having same operating point formed in trough above buried layer

摘要

The semiconductor component has 2 internal cells in a trough (7), with a buried layer (3) between the trough and the semiconductor substrate (1) and a termination zone (4) between the buried layer and the surface of the semiconductor component. The inner cells have approximately the same operating point for compensating differences between them.