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Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation process
Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation process
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机译:具有使用n型掺杂剂和湿法氧化工艺形成的具有对准特征的半导体器件的制造方法
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摘要
The present invention provides a method for manufacturing a semiconductor device having an alignment feature. The method for manufacturing the semiconductor device, among other steps, may include implanting an n-type dopant into a substrate thereby forming an implanted region and an unimplanted region in the substrate. The method may further include oxidizing the substrate using a wet oxidation process, the wet oxidation process and n-type dopant causing a ratio of oxidation of the implanted region to the unimplanted region to be 2:1 or greater, and then removing the oxidized portions of the substrate thereby leaving an alignment feature proximate the implanted region.
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